赵宜鹏,男,汉族,中共党员,1993年4月出生于河南省驻马店市。理学物理学博士、衡阳师范学院讲师,硕士研究生导师。
主要研究方向为表面与低维物理,包括二维纳米体系能带结构的应变工程;基于过渡金属硫族化合物的垂直堆垛异质结的光电性能调控;二维体系电子学性质与界面堆垛之间的关系;过渡金属硫族化合物的替代掺杂和尺寸效应等。
邮箱:ypzhaohynu@163.com
发表的代表性论文:
Wang, Y.; Yang, W.; Xu, X.; Tan, Y.; Yang, T.*; Liu, G.; Yang, D.; Li, Y.; Zhao, Y.; Li, H.; Ma, L.*;, Xiao,B.; Zhou, W.*; Rectified electrical transport and self-powered photoresponse in ZnTe/WS2 heterostructures. Solid State Commun. 2025, 397, 115782.
Liu, J.; Tan, J.; Liao, W.; Zhao, Y.; Yang, H.; Zuo, H.; Dong, J.*; Ouyang, G.*; Wrinkle Effect in Monolayer Phosphorene. J. Phys. Chem. C 2025, 129, 7, 3837–3848.
Yang, D.; Zhao, Y.*; Yang, T.; Liu, C.; Li, H.; Li, Z.*; Zhang, Z.; Ma, L.*, Vis-Infrared Wide-band and Self-powered Photodetectors Base on CuI/MoS2 Van der Waals Heterostructure. J. Mol. Struct. 2025, 1323, 1440773.
Wang, J.; Li, Z.; Ma, L; Zhao, Y.*; Strain Engineering on the Electronic Structure and Optical Properties of Monolayer WSi2X4 (X = N, P, As). J. Electron. Mater. 2024, 53(10):6258-6268.
Li, X.; Shao, C.; Zhao, Y.; Ouyang, G*; Hu, W.*; Zhang, J.*; Pyramid-Shaped Perovskite Single-Crystal Growth and Application for High-Performance Photodetector. Adv. Optical Mater. 2024, 12(25), 2400329.
Zhao, Y.; Tan, Q.*; Li, H.; Li, Z.; Wang, Y.; Ma, L.*, Tunable electronic and photoelectric properties of Janus group-III chalcogenide monolayers and based heterostructures. Sci. Rep. 2024, 14 (1), 10698.
Lv, T.; Ge, M.; Zeng, Y.; Xu, D.; Zhao, Y.; Ouyang, G.*; Direct Z-scheme MS2/Si2PAs (M=Zr, Hf) heterostructures for efficient water splitting: A first-principles study. Appl. Phys. Lett. 2024, 124, 023901.
Ma, L.*; Liu, D.; Xiao, B.; Cao, Y.; Wang, Y.; Zhao, Y.*; Pressure and strain engineering of the structural and electronic transitions in ReS2. J. Phys.: Condens. Matter 2023, 35 (36), 365402.
Ma, L.; Wang, Y.; Zhao, Y.*, Tunable Band Gap and Raman Shifts of Two-Dimensional ReX2 (X=S, Se): Layer and Temperature Effect. J. Electron. Mater. 2022, 51 (7), 3919-3924.
Ma, L.; Tan, Y.; Zhou, W.; Zhao, Y.*; Wang, Y.*, In-situ strain engineering on the emission and photoresponse of epitaxial vertical and horizontal CsPbBr3 triangular nanoplates. Mater. Lett. 2022, 315, 131931.
Zhao, Y.*; Hu, H.; Ouyang, G.*; Optimizing the photovoltaic effect in one-dimensional single-wall carbon nanotube @ MoS2 van der Waals heteronanotubes. J. Appl. Phys. 2022, 132(23), 234304.
Cai, B.; Zhao, Y.; Xu, D.; Ouyang, G.*; Optimized photoelectric conversion properties of PbSxSe1−x-QD/MoS2-NT 0D–1D mixed-dimensional van der Waals heterostructures. New J. Phys. 2022, 24(6), 063012.
Zhao, Y.; Tan, S.; Ouyang, G.*; Strain-engineered photoelectric conversion properties of lateral monolayer WS2/WSe2 heterojunctions. J. Phys. D: Appl. Phys. 2021, 54(14), 145107.
Zhao, Y.; Ouyang, G.*; Thickness-dependent photoelectric properties of MoS2/Si heterostructure solar cells. Sci. Rep. 2019, 7, 17381.
Zhao, Y.; Yu, W.; Ouyang, G*; Size-tunable band alignment and optoelectronic properties of transition metal dichalcogenides van der Waals heterostructures. J. Phys. D: Appl. Phys. 2018, 51, 015111.
Zhao, Y.; Zhang, Z.; Ouyang, G*; Bandgap engineering of two-dimensional transition-metal dichalcogenide alloys: Size and chemical composition effects. Appl. Phys. A 2018, 124, 292.
Zhao, Y.; Liao, C.; Ouyang, G*; Band engineering in twisted molybdenum disulfide bilayers. J. Phys. D: Appl. Phys. 2018, 51, 185101.
Liao, C.; Zhao, Y.; Ouyang, G*; Strain-modulated band engineering in two-dimensional black phosphorus/MoS2 van der Waals heterojunction. ACS Omega 2018, 3, 14641-14649.
Zhao, Y.; Zhang, Z.; Ouyang, G*; Lattice Strain Effect on the Band Offset in Single-Layer MoS2: An Atomic-Bond-Relaxation Approach. J. Phys. Chem. C 2017, 121, 5366-5371.
Zhang, Z.; Zhao, Y.; Ouyang, G*; Strain Modulation of Electronic Properties of Monolayer Black Phosphorus. J. Phys. Chem. C 2017, 121, 35, 19296-19304.
He, Y.; Zhao, Y.; Quan, J.; Ouyang, G*; Shape engineering for electronic and optoelectronic properties of Si nanostructure solar cells. J. Appl. Phys. 2016, 120, 144302.